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EC6201 – ELECTRONIC DEVICES – SYLLABUS (REGULATION 2013) ANNA UNIVERSITY

 

UNIT I : SEMICONDUCTOR DIODE 

(EC6201) PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics.

UNIT II : BIPOLAR JUNCTION 

NPN -PNP – Junctions – Early effect – Current equations – Input and Output characteristics of CE, CB CC-Hybrid – π model – h-parameter model, Ebers Moll Model- Gummel Poon – model, Multi Emitter Transistor.

UNIT III : FIELD EFFECT TRANSISTORS 

JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D – MOSFET, E – MOSFET – ,Current equation – Equivalent circuit model and its parameters, FINFET , DUAL GATE MOSFET.

UNIT IV : SPECIAL SEMICONDUCTOR DEVICES 

Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

UNIT V : POWER DEVICES AND DISPLAY DEVICES 

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS – VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.

 

CLICK HERE TO DOWNLOAD THE SYLLABUS OF (EC6201)

Course Curriculum

IMPORTANT QUESTIONS EC6201 ELECTRONIC DEVICES FREE 00:00:00
QUESTION BANK EC6201 ELECTRONIC DEVICES FREE 00:00:00
Unit 1
ec6201 – Unit 1 Introduction FREE 00:00:00
ec6201 – Semiconductor FREE 00:00:00
ec6201 – Insulators FREE 00:00:00
ec6201 – N type semiconductor FREE 00:00:00
ec6201 – P type semiconductor 00:00:00
ec6201 – PN junction diode 00:00:00
ec6201 – Operation of PN junction diode forward bias & reverse bias 00:00:00
ec6201 – VI characteristics of PN junction diode 00:00:00
ec6201 – Diode current equation 00:00:00
ec6201 – Drift & Diffusion current 00:00:00
ec6201 – Diode & switching characteristics 00:00:00
ec6201 – Application of diode and overview of unit 1 00:00:00
Unit 2
ec6201 – Unit 2 Introduction 00:00:00
ec6201 – BJT NPN PNP 00:00:00
ec6201 – Transistor current equation 00:00:00
ec6201 – H parameter model CC, CB, CE 00:00:00
ec6201 – Early voltage 00:00:00
ec6201 – CB configuration 00:00:00
ec6201 – CE configuration 00:00:00
ec6201 – CC configuration 00:00:00
ec6201 – Hybrid – Pi model 00:00:00
ec6201 – Eber’s Moll model of transistor 00:00:00
ec6201 – Gummel poon model 00:00:00
ec6201 – Multi emitter transistor 00:00:00
Unit 3
ec6201 – Unit 3 Introduction 00:00:00
ec6201 – JFET’S ,channel ,operation 00:00:00
ec6201 – Characteristics of JFET 00:00:00
ec6201 – Transfer characteristics 00:00:00
ec6201 – JFET parameter 00:00:00
ec6201 – MOSFET, depletion 00:00:00
ec6201 – Characteristics of depletion type 00:00:00
ec6201 – Enhancement type MOSFET 00:00:00
ec6201 – Characteristics of enhancement 00:00:00
ec6201 – Dual gate 00:00:00
ec6201 – FINFET 00:00:00
Unit 4
ec6201 – unit 4 introduction 00:00:00
ec6201 – Metal semiconductor junction diode 00:00:00
ec6201 – MESFET 00:00:00
ec6201 – Schottky barrier diode 00:00:00
ec6201 – zener diode 00:00:00
ec6201 – varactor diode 00:00:00
ec6201 – Laser diode 00:00:00
ec6201 – light dependent resistor 00:00:00
ec6201 – Gallium arsenide device 00:00:00
ec6201 – Tunnel diode 00:00:00
Unit 5
ec6201 – Introduction to unit 5 00:00:00
ec6201 – SCR 00:00:00
ec6201 – VI characteristics of SCR 00:00:00
ec6201 – TRIAC 00:00:00
ec6201 – Uni junction transistor 00:00:00
ec6201 – DIAC 00:00:00
ec6201 – Power BJT 00:00:00
ec6201 – Merits, Demerits & Application of Power BJT 00:00:00
ec6201 – Power MOSFET 00:00:00
ec6201 – LCD 00:00:00
ec6201 – LED 00:00:00
ec6201 – Photo transistor 00:00:00
ec6201 – Solar cell 00:00:00
ec6201 – Opto coupler 00:00:00
ec6201 – CCD 00:00:00

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